Device simulation that shows its work.
TCAD Studio is a browser workbench for 2D simulation of GaN HEMTs and silicon MOSFETs: a readable input deck, a structure view, results you can compare, a target search, and a Claude-powered assistant that only reports numbers the solver actually produced.
DEVSIM physics · Bayesian design search · Claude with tool use
title "NMOS with selectable gate dielectric"# Target-search demo: which dielectric and gate voltage give a required drain current?set DIEL=SiO2 options=SiO2,Si3N4,Al2O3,HfO2 label="Gate dielectric"set tox=0.005 min=0.002 max=0.02 unit=um label="Dielectric thickness"set VG=1.0 min=0 max=3 unit=V label="Gate bias" region name=diel material=$DIEL x=0.4,0.9 y=-tox,0region name=si material=Si x=0,1.3 y=0,0.6 electrode name=gate type=gate wf=4.1 x=0.4,0.9 y=-tox,-toxelectrode name=source type=ohmic x=0,0.3 y=0,0electrode name=drain type=ohmic x=1.0,1.3 y=0,0electrode name=body type=ohmic x=0,1.3 y=0.6,0.6 doping uniform region=si acceptor=3e17doping gaussian donor=1e20 x=0,0.4 y=0,0 char=0.0332 lateral=0.7doping gaussian donor=1e20 x=0.9,1.3 y=0,0 char=0.0332 lateral=0.7 models ith=0.1solve op vg=VG vd=1solve idvg vd=1 vg=-0.5:2:0.1
01 · The workflow
From a few lines of deck to a decision.
One workspace carries a device from definition to a design choice, keeping every run, input and output file.
02 · In the workbench
Built for the engineer at the bench.
03 · The assistant
AI is not the physics engine. It makes the physics engine easier to use.
The assistant is Claude, working through the same tools you do. It sets up runs and design searches from a plain-language request, and reports back with run IDs you can open.
- Every number comes from a run.Figures it reports must come from a simulation result in the conversation, never an estimate.
- It states model limits.When a simplification matters — no self-heating, classical 2DEG — it says so.
Engineer
Assistant · tool calls
Reports the best gate length found, its gm and the run IDs — and notes that self-heating isn't modelled.
Illustrative. The tool and metric names are the real ones.
04 · Physics
Established physics, stated plainly.
2D drift-diffusion on the open-source DEVSIM engine, with the model limits published rather than hidden.
AlGaN/GaN HEMT
Polarisation-induced 2DEG, transfer and output sweeps, off-state breakdown estimate.
Silicon NMOS
Threshold, subthreshold swing, on/off current and transconductance.
Custom 2D deck
Rectangular regions, boundary contacts, doping profiles and DC sweeps, defined in text.
05 · How we make claims
Trust before scale.
Numbers come from runs
Results, the assistant's answers and downloadable files all trace back to a simulation you can reopen.
Partial stays partial
If a sweep fails to converge, completed points are kept and the run is marked partial — it can never become an optimiser's best design.
No unearned comparisons
We don't claim accuracy or speed advantages over established TCAD tools before published benchmarks against measured devices.
Working on GaN or silicon devices?
We're opening the private beta to a small number of labs and teams. Tell us what you simulate.